* Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A
* Excellent current gain characteristics
* Pb-free lead plating package Symbol BTB826M3 Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base V
BTB826M3 Datasheet (208.51 KB)
BTB826M3
CYStech
208.51 KB
Pnp transistor.
CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB826M3 Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date :2013.08.12 Pa.
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