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BTB826M3 - PNP Transistor

CYStech

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Datasheet Details

Part number	BTB826M3
Manufacturer	CYStech
File Size	208.51 KB
Description	PNP Transistor
Datasheet	BTB826M3-CYStech.pdf

BTB826M3 Product details

Features

Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A.
Excellent current gain characteristics.
Pb-free lead plating package Symbol BTB826M3 Outline SOT-89 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation VCBO VCEO VEBO IC ICP Pd Power Dissipation Pd ESD susceptibility Junction.

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Published: Apr 6, 2019 |