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BTD2114N3 - High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech

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Datasheet Details

Part number: BTD2114N3
Manufacturer: CYStech
File Size: 355.75 KB
Datasheet: BTD2114N3-CYStech.pdf
Description: High Current Gain Medium Power NPN Epitaxial Planar Transistor

BTD2114N3 Product details

Features

High Emitter-Base voltage, VEBO=12V(min).
High DC current gain, hFE=1200(min. ) @VCE=3V, IC=10mA.
Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Ordering Information Device BTD2114N3-0-T1-G Package Shipping SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products,.

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High Current Gain Medium Power NPN Epitaxial Planar Transistor CYStech

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