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BTD2114N3 Datasheet - CYStech

BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor

BTD2114N3 Features

* High Emitter-Base voltage, VEBO=12V(min).

* High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.

* Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.

* Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Order

BTD2114N3 Datasheet (355.75 KB)

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Datasheet Details

Part number:

BTD2114N3

Manufacturer:

CYStech

File Size:

355.75 KB

Description:

High current gain medium power npn epitaxial planar transistor.

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BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor CYStech

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