BTD2114N3 Datasheet, Transistor, CYStech

BTD2114N3 Features

• Transistor
• High Emitter-Base voltage, VEBO=12V(min).
• High DC current gain, hFE=1200(min.) @VCE=3V, IC=10mA.
• Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.

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Part number:

BTD2114N3

Manufacturer:

CYStech

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355.75kb

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📄 Datasheet

Description:

High current gain medium power npn epitaxial planar transistor.

TAGS

BTD2114N3

CYStech

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