BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor

CYStech

Description

CYStech Electronics Corp.Spec.No.: C857N3 Issued Date : 2012.01.02 Revised Date : 2017.12.05 Page No.: 1/8 High Current Gain Medium Power NPN Ep.

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Datasheet Specifications

Part number: BTD2114N3
Manufacturer: CYStech
File Size: 355.75 KB
Datasheet: BTD2114N3-CYStech.pdf
Description: High Current Gain Medium Power NPN Epitaxial Planar Transistor

Features

* High Emitter-Base voltage, VEBO=12V(min).
* High DC current gain, hFE=1200(min. ) @VCE=3V, IC=10mA.
* Low VCESAT, VCESAT=0.16V typ. @ IC=500mA, IB=20mA.
* Pb-free and halogen-free package. Symbol BTD2114N3 Outline SOT-23 C B：Base C：Collector E：Emitter E B Order

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BTD2114N3 High Current Gain Medium Power NPN Epitaxial Planar Transistor CYStech

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