BTD2118J3 - NPN Epitaxial Planar Transistor

Cystech Electonics

Datasheet Details

Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A.
Excellent current gain characteristics www. DataSheet4U. com.
Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Power Dissipation(TA=25℃) Power Dissipation(TC=25℃) Junction Temperature Storage Tempe.

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