* Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A
* Excellent current gain characteristics www.DataSheet4U.com
* Complementary to BTB1412J3 Symbol BTD2118J3 Outline TO-252 B：Base C：Collector E：Emitter B C E Absolute Maximum Ratings (Ta=25°C) Parameter Col
BTD2118J3 Datasheet (182.77 KB)
BTD2118J3
Cystech Electonics
182.77 KB
Npn epitaxial planar transistor.
CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor Spec. No. : C847J3 Issued Date : 2003.03.26 Revised Date :2004.07.02 Page No. : .
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