MTDN5820Z6 Datasheet - CYStech

MTDN5820Z6 Dual N-Channel Enhancement Mode Power MOSFET

VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universal.

MTDN5820Z6 Features

* Simple drive requirement

* Low gate charge

* Low on-resistance

* Fast switching speed

* ESD protected

* Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Prod

MTDN5820Z6 Datasheet (307.62 KB)