MTDN5820Z6

Dual N-Channel Enhancement Mode Power MOSFET

CYStech

MTDN5820Z6 Features

* Simple drive requirement

* Low gate charge

* Low on-resistance

* Fast switching speed

* ESD protected

* Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Prod

MTDN5820Z6 General Description

VGS=2.5V, ID=5.5A 7.8 mΩ The MTDN5820Z6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×5-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×5-6L package is universal.

MTDN5820Z6 Datasheet (307.62 KB)

MTDN5820Z6 Datasheet Preview — Preview of MTDN5820Z6 PDF

Datasheet Details

Part number:

MTDN5820Z6

Manufacturer:

CYStech

File Size:

307.62 KB

Description:

Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C911Z6 Issued Date : 2013.11.28 Revised Date : Page No. : 1/9 20V Common Drain Dual N -Channel Enhancement Mod.

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MTDN5820Z6 Dual N-Channel Enhancement Mode Power MOSFET CYStech

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MTDN5820Z6 Features

MTDN5820Z6 General Description

Datasheet Details

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Description:

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