Datasheet4U Logo Datasheet4U.com

MTDN5820Z6 Dual N-Channel Enhancement Mode Power MOSFET

MTDN5820Z6 Description

CYStech Electronics Corp.Spec.No.: C911Z6 Issued Date : 2013.11.28 Revised Date : Page No.: 1/9 20V Common Drain Dual N -Channel Enhancement Mod.
VGS=2.

MTDN5820Z6 Features

* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G：Gate S：Source D：Drain MTDN5820Z6 CYStek Prod

📥 Download Datasheet

Preview of MTDN5820Z6 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MTDN5820Z6
Manufacturer
CYStech
File Size
307.62 KB
Datasheet
MTDN5820Z6-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • MTD-0208N - Tunnel Diode Detectors (Aeroflex)
  • MTD-0218N - Tunnel Diode Detectors (Aeroflex)
  • MTD-0818N - Tunnel Diode Detectors (Aeroflex)
  • MTD-1002N - Tunnel Diode Detectors (Aeroflex)
  • MTD-160 - PHASE CONTROL THYRISTOR (ELECTROVIPRYAMITEL)
  • MTD010P03V8 - P-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTD011N10RH8 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)
  • MTD011N10RJ3 - N-Channel Enhancement Mode Power MOSFET (Cystech Electonics)

📌 All Tags

Dual N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTDN5820Z6-like datasheet