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MTDN5820Z6 Dual N-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.Spec.No.: C911Z6 Issued Date : 2013.11.28 Revised Date : Page No.: 1/9 20V Common Drain Dual N -Channel Enhancement Mod.
VGS=2.

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Datasheet Specifications

Part number
MTDN5820Z6
Manufacturer
CYStech
File Size
307.62 KB
Datasheet
MTDN5820Z6-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low gate charge
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free package Equivalent Circuit MTDN5280Z6 Outline TDFN2×5-6L G:Gate S:Source D:Drain MTDN5820Z6 CYStek Prod

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