MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.Spec.No.: C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No.: 1/10 N-Channel Enhancement Mode Power MOS.

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Datasheet Specifications

Part number: MTD011N10RH8
Manufacturer: Cystech Electonics
File Size: 583.93 KB
Datasheet: MTD011N10RH8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package

MTD011N10RH8 Distributors

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MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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