* BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package
MTD011N10RH8 Datasheet (583.93 KB)
MTD011N10RH8
Cystech Electonics
583.93 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10
N-Channel Enhancement Mode Power MOS.
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