MTD011N10RH8

The MTD011N10RH8 is N-Channel Enhancement Mode Power MOSFET designed by Cystech Electonics.

Product Overview

Cystech Electonics

Part number	MTD011N10RH8
Manufacturer	Cystech Electonics
File Size	583.93 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTD011N10RH8-CystechElectonics.pdf
Additional preview pages of the MTD011N10RH8 datasheet.

BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ.
Single Drive Requirement.
Low On-resistance.
Fast Switching Characteristic.
Repetitive Avalanche Rated.
Pb-free lead plating and Halogen-free package Symbol MTD011N10RH8 Outline Pin 1 DFN5×6 G：Gate D：Drain S：Source Ordering Information Device MTD011N10RH8-0-T6-G Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000.

📁 Similar Datasheet

Other Datasheets by Cystech Electonics

Published: Sep 4, 2016 |