MTD011N10RH8 Datasheet - Cystech Electonics

MTD011N10RH8, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.Spec.No.: C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No.: 1/10 N-Channel Enhancement Mode Power MOS.

MTD011N10RH8-CystechElectonics.pdf

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Datasheet Details

Part number:

MTD011N10RH8

Manufacturer:

Cystech Electonics

File Size:

583.93 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8mΩ
* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free lead plating and Halogen-free package

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MTD011N10RH8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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