* Low On Resistance
* Simple Drive Requirement
* Low Gate Charge
* Fast Switching Characteristic
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=11A RDS(ON)@VGS=6V, ID=6A 100V 48A 10.6A 8.4 mΩ
MTD011N10RJ3 Datasheet (364.65 KB)
MTD011N10RJ3
Cystech Electonics
364.65 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RJ3
Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : .
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