MTD011N10RQ8 N-Channel Enhancement Mode Power MOSFET

Cystech Electonics

Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec.No.: C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 .

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Datasheet Specifications

Part number: MTD011N10RQ8
Manufacturer: Cystech Electonics
File Size: 555.53 KB
Datasheet: MTD011N10RQ8-CystechElectonics.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 11.5A 9.2 mΩ(typ) 12.8 mΩ(typ) Symbol MTD011N10RQ8

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD011N10RQ8 CYStek Product Specification

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MTD011N10RQ8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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