* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 11.5A 9.2 mΩ(typ) 12.8 mΩ(typ) Symbol MTD011N10RQ8
MTD011N10RQ8 Datasheet (555.53 KB)
MTD011N10RQ8
Cystech Electonics
555.53 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTD011N10RQ8
Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 .
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