MTD011N10RQ8 Datasheet - Cystech Electonics

MTD011N10RQ8, N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec.No.: C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 .

MTD011N10RQ8-CystechElectonics.pdf

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Datasheet Details

Part number:

MTD011N10RQ8

Manufacturer:

Cystech Electonics

File Size:

555.53 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 11.5A 9.2 mΩ(typ) 12.8 mΩ(typ) Symbol MTD011N10RQ8

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTD011N10RQ8 CYStek Product Specification

MTD011N10RQ8 Distributors

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MTD011N10RQ8 N-Channel Enhancement Mode Power MOSFET Cystech Electonics

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