* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-10V ID@ TA=25°C, VGS=-10V RDSON(MAX)@VGS=-10V, ID=-9A RDSON(MAX)@VGS=-4.5V, ID=-5A -30V -40A -10A 11mΩ(typ.) 16mΩ(typ.) Equivalent Circuit M
MTD010P03V8 Datasheet (357.93 KB)
MTD010P03V8
Cystech Electonics
357.93 KB
P-channel enhancement mode power mosfet.
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTD010P03V8
Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1.
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