MTDN8233CDV8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C911V8 Issued Date : 2013.12.02 Revised Date : Page No.: 1/9 Common Drain Dual N -Channel Enhancement Mode MO.

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Datasheet Specifications

Part number: MTDN8233CDV8
Manufacturer: CYStech
File Size: 311.47 KB
Datasheet: MTDN8233CDV8-CYStech.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* Simple drive requirement
* Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.5 mΩ Equivalent Circui

Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDN8233CDV8 CYStek Product Specification

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MTDN8233CDV8 Dual N-Channel Enhancement Mode Power MOSFET CYStech

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