* Simple drive requirement
* Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.5 mΩ Equivalent Circui
MTDN8233CDV8 Datasheet (311.47 KB)
MTDN8233CDV8
CYStech
311.47 KB
Dual n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C911V8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MO.
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