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MTDN8233CDV8 Dual N-Channel Enhancement Mode Power MOSFET

MTDN8233CDV8 Description

CYStech Electronics Corp.Spec.No.: C911V8 Issued Date : 2013.12.02 Revised Date : Page No.: 1/9 Common Drain Dual N -Channel Enhancement Mode MO.

MTDN8233CDV8 Features

* Simple drive requirement
* Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A
* Low on-resistance
* Fast switching speed
* ESD protected
* Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.5 mΩ Equivalent Circui

MTDN8233CDV8 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDN8233CDV8 CYStek Product Specification

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Datasheet Details

Part number
MTDN8233CDV8
Manufacturer
CYStech
File Size
311.47 KB
Datasheet
MTDN8233CDV8-CYStech.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTDN8233CDV8-like datasheet