MTDN9926Q8 Dual N-Channel Enhancement Mode Power MOSFET

CYStech

Description

CYStech Electronics Corp.Spec.No.: C747Q8 Issued Date : 2009.11.09 Revised Date : 2011.03.21 Page No.: 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER.
RDSON(MAX) 28mΩ The MTDN9926Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and c.

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Datasheet Specifications

Part number: MTDN9926Q8
Manufacturer: CYStech
File Size: 383.19 KB
Datasheet: MTDN9926Q8-CYStech.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON)=28mΩ@VGS=4.5V, ID=6A
* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Capable of 2.5V gate drive
* Pb-free lead plating package Equivalent Circuit MTDN9926Q8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Informati

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MTDN9926Q8 Dual N-Channel Enhancement Mode Power MOSFET CYStech

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