Datasheet Summary
PROCESS
Small Signal Transistor
- Amp/Switch Transistor Chip
Central
Semiconductor Corp.
PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 47,150 PRINCIPAL DEVICE TYPES 2N3906 CMPT3906 CMST3906 CXT3906 CZT3906 EPITAXIAL PLANAR 12 x 20 MILS 9.0 MILS 3.6 X 3.6 MILS 3.6 X 3.6 MILS Al
- 30,000Å Au
- 18,000Å
BACKSIDE COLLECTOR w w w
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Central
PROCESS
Semiconductor...