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CP591X Datasheet - Central Semiconductor

CP591X PNP Transistor

PROCESS Small Signal Transistor CP591X PNP - Amp/Switch Transistor Chip www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 5 INCH WAFER 45,900 PRINCIPAL DEVICE TYPES 2N2905A 2N2907A CMPT2907A CMST2907A CXT2907A CZT2907A PN2907A BACKSIDE COLLECTOR R1 EPITAXIAL PLANAR 19 x 19 MILS 5.9 MILS 3.5 x 4.3 MILS 3.5 x 4.5 MILS Al - 13,000Å Au - 18,000Å R2 (10-February 2.

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CP591X PNP Transistor Central Semiconductor

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