Datasheet4U Logo Datasheet4U.com

BC212 - SILICON PNP TRANSISTORS

Description

The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications.

📥 Download Datasheet

Datasheet preview – BC212

Datasheet Details

Part number BC212
Manufacturer Central Semiconductor
File Size 134.27 KB
Description SILICON PNP TRANSISTORS
Datasheet download datasheet BC212 Datasheet
Additional preview pages of the BC212 datasheet.

📁 Similar Datasheet

  • BC212 - PNP Transistor (CDIL)
  • BC212 - Amplifier PNP Transistors (Motorola)
  • BC212 - Process 63 PNP Medium Power Transistor (Fairchild)
  • BC212 - COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTOR (Micro Electronics)
  • BC212 - PNP Plastic Encapsulated Transistor (SeCoS)
  • BC212 - PNP Silicon Epitaxial Planar Transistor (SEMTECH)
  • BC212A - PNP Transistor (CDIL)
  • BC212B - PNP Transistor (CDIL)
  • BC212B - Amplifier PNP Transistors (Motorola)
  • BC212B - Amplifier Transistors (ON Semiconductor)
Other Datasheets by Central Semiconductor
  • BC212A - SILICON PNP TRANSISTORS
  • BC212B - SILICON PNP TRANSISTORS

Full PDF Text Transcription

Click to expand full text
BC212 BC212A BC212B SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC212 series are silicon PNP transistors designed for low noise, high gain amplifier applications. TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 60 50 5.0 200 300 -65 to +150 416 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=4.0V BVCBO IC=10μA 60 BVCEO IC=2.0mA 50 BVEBO IE=10μA 5.0 VCE(SAT) IC=10mA, IB=500μA VCE(SAT) IC=100mA, IB=5.
Published: |