BD137
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Npn silicon transistor. The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and swit
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BD130 - NPN Silicon Transistor
(Comset Semiconductors)
BD130 S
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NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS
The BD130 is a silicon epitaxial-.
BD130 - NPN Silicon Power
(Solitron Devices)
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BD13003B - NPN Plastic Encapsulated Transistor
(SeCoS)
Elektronische Bauelemente
BD13003B
1.5A, 700V NPN Plastic-Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f.
BD131 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD131
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Breakdown Vo.
BD131 - NPN power transistor
(NXP)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BD131 NPN power transistor
Product specification Supersedes data of 1997 Mar 04 1999 Apr 12.
BD131 - SILICON PLANAR EPITAXIAL POWER TRANSISTORS
(Comset Semiconductors)
NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD131are NPN transistors mounted in Jedec TO-126 plastic package. Medium power applications. .
BD132 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD132
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DESCRIPTION ·Complement to type BD131 ·With .
BD132 - SILICON PLANAR EPITAXIAL POWER TRANSISTORS
(Comset Semiconductors)
PNP BD132 SILICON PLANAR EPITAXIAL POWER TRANSISTORS
The BD132 are PNP transistors mounted in Jedec TO-126 plastic package. Medium power applications..
BD132 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
ESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -45V(Min.).
BD1321G - Ground Sense Low Power General Purpose Operational Amplifiers
(ROHM)
Datasheet
Operational Amplifier
Ground Sense Low Power General Purpose Operational Amplifiers
BD1321G
General Description
BD1321G is a single low vol.
