CDM22010-650 Datasheet (Central Semiconductor) - SILICON N-CHANNEL POWER MOSFET

CDM22010-650, SILICON N-CHANNEL POWER MOSFET

The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters.

This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage

CDM22010-650 Features

* High voltage capability (VDS=650V)

* Low gate charge (Qgs=8.0nC)

* Low rDS(ON) (0.88Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10