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CDM22010-650 SILICON N-CHANNEL POWER MOSFET

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Description

CDM22010-650 SILICON N-CHANNEL POWER MOSFET 10 AMP, 650 VOLT w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such.

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Features

* High voltage capability (VDS=650V)
* Low gate charge (Qgs=8.0nC)
* Low rDS(ON) (0.88Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10

Applications

* such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. TO-220 CASE MARKING CODE: CDM10-650 APPLICATIONS:
* Power Factor Correction
* Motor drives
* Alter

CDM22010-650 Distributors

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