CDM4-650 Datasheet (Central Semiconductor) - SILICON N-CHANNEL MEDIUM POWER MOSFET

CDM4-650, SILICON N-CHANNEL MEDIUM POWER MOSFET

The CENTRAL SEMICONDUCTOR CDM4-650 is a 650 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters.

This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for

CDM4-650 Features

* High voltage capability (VDS=650V)

* Low gate charge (Qgs=3.0nC)

* Low rDS(ON) (2.44Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 4.0