* High voltage capability (VDS=650V)
* Low gate charge (Qgs=3.0nC)
* Low rDS(ON) (2.44Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 4.0
CDM4-650 Datasheet (815.09 KB)
CDM4-650
815.09 KB
Silicon n-channel medium power mosfet.
CDM4-650 SURFACE MOUNT SILICON N-CHANNEL MEDIUM POWER MOSFET 4.0 AMP, 650 VOLT DPAK CASE APPLICATIONS: Power Factor Correction Alt.
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