CDMSJ22010-650 Datasheet - Central Semiconductor

CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET

The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low .

CDMSJ22010-650 Features

* High voltage capability (VDS=650V)

* Low gate charge (Qgs=4nC)

* Low rDS(ON) (0.39Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forward Current Power Dissipati

CDMSJ22010-650-CentralSemiconductor.pdf