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CDMSJ22010-650

N-CHANNEL SUPER JUNCTION MOSFET

CDMSJ22010-650 Features

* High voltage capability (VDS=650V)

* Low gate charge (Qgs=4nC)

* Low rDS(ON) (0.39Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forward Current Power Dissipati

CDMSJ22010-650 General Description

The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low .

CDMSJ22010-650 Datasheet (726.32 KB)

Preview of CDMSJ22010-650 PDF

Datasheet Details

Part number:

CDMSJ22010-650

Manufacturer:

Central Semiconductor ↗

File Size:

726.32 KB

Description:

N-channel super junction mosfet.
CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET 10 AMP, 650 VOLT TO-220FP CASE APPLICATIONS:

* Power Factor Correction

* TV Power
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TAGS

CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET Central Semiconductor

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