CMPDM8120 Datasheet (Central Semiconductor) - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMPDM8120, SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

This MOSFET offers low rDS(ON) and low threshold voltage.

MARKING CODE: C8120 SOT-23 CASE APPL

CMPDM8120 Features

* Low rDS(ON)

* Low threshold voltage

* Logic level compatibility

* Small SOT-23 package SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.0 860 950 360 4.0 4.0 350 -65 to +150 357 MAX 50 500 1.0 0.9 150 142 200 240 UNITS V V mA mA mA A A mW °C °C/W UNITS nA nA V