CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

Description

CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w.c e n t r a l s e m i .c o m .
The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed fo.

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Datasheet Specifications

Part number: CMPDM8120
Manufacturer: Central Semiconductor ↗
File Size: 347.23 KB
Datasheet: CMPDM8120_CentralSemiconductor.pdf
Description: SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Features

* Low rDS(ON)
* Low threshold voltage
* Logic level compatibility
* Small SOT-23 package SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.0 860 950 360 4.0 4.0 350 -65 to +150 357 MAX 50 500 1.0 0.9 150 142 200 240 UNITS V V mA mA mA A A mW °C °C/W UNITS nA nA V

Applications

* This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: C8120 SOT-23 CASE APPLICATIONS:
* Load/Power switches
* Power supply converter circuits
* Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuou

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CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET Central Semiconductor

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