CMPDM8120 - SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

Central Semiconductor

The CMPDM8120 by Central Semiconductor is a SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET. Below is the official datasheet preview.

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CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET by Central Semiconductor - Datasheet Preview — Official preview page of the **CMPDM8120** SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET datasheet (Central Semiconductor).

Datasheet Details

Part number	CMPDM8120
Manufacturer	Central Semiconductor
File Size	347.23 KB
Description	SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
Datasheet	CMPDM8120_CentralSemiconductor.pdf
Additional preview pages of the CMPDM8120 datasheet.

CMPDM8120 Product details

Description

The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. Load/Power switches Power supply converter circuits Battery powered portable equipment MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Conti

Features

Low rDS(ON).
Low threshold voltage.
Logic level compatibility.
Small SOT-23 package SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.0 860 950 360 4.0 4.0 350 -65 to +150 357 MAX 50 500 1.0 0.9 150 142 200 240 UNITS V V mA mA mA A A mW °C °C/W UNITS nA nA V V V mΩ mΩ mΩ mΩ S pF pF pF ns ns.

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Published: Mar 29, 2011 |