CP318V Datasheet (Central Semiconductor) - Small Signal Transistor NPN

CP318V, Small Signal Transistor NPN - High Voltage Transistor Chip

PROCESS Small Signal Transistor CP318V NPN - High Voltage Transistor Chip PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 25,536 PRINCIPAL DEVICE TYPES MPS455 EPITAXIAL PLANAR 26 x 26 MILS 7.1 MILS ± 0.6 MILS 5.5 x 5.5 MILS 5.5 x 5.5 MILS Al-Si - 17,000Å Au - 12,000Å BACKSIDE COLLECTOR R2 (22-March 2010) w w w.

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