CP357X Datasheet - Central Semiconductor

CP357X Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip

PROCESS Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip CP357X PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 22 x 17 MILS 5.9 MILS 3.9 x 3.9 MILS 14 x 9 MILS Al-Si - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 63,570 PRINCIPAL DEVICE TYPE CMLDM3737 R0 (17-November 2010) w w w. c e n t r a l s e m i . c o m www.DataSheet4U.com PROCESS CP357X Typical Electrical Characteri.

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Datasheet Details

Part number:

CP357X

Manufacturer:

Central Semiconductor ↗

File Size:

757.75 KB

Description:

Small signal mosfet transistor n-channel enhancement-mode mosfet chip.

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CP357X CP357X Small Signal MOSFET Transistor N-Channel Enhancement-Mode MOSFET Chip Central Semiconductor