CP359R Datasheet - Central Semiconductor

CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip

PROCESS Small Signal MOSFET CP359R N-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size Die Thickness Gate Bonding Pad Area Source Bonding Pad Area Top Side Metalization Back Side Metalization 9.1 x 9.1 MILS 3.9 MILS 2.5 MILS DIAMETER 3.9 x 3.9 MILS Al-Si - 30,000Å Au - 12,000Å GEOMETRY GROSS DIE PER 6 INCH WAFER 290,000 PRINCIPAL DEVICE TYPE CMRDM3590 R0 (13-May 2010) w w w. c e n t r a l s e m i . c o m www.DataSheet4U.com PROCESS CP359R Typical Electrical Characteristics .

CP359R Datasheet (771.25 KB)

CP359R Datasheet Preview — Preview of CP359R PDF

Datasheet Details

Part number:

CP359R

Manufacturer:

Central Semiconductor ↗

File Size:

771.25 KB

Description:

Small signal mosfet n-channel enhancement-mode mosfet chip.

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CP359R Small Signal MOSFET N-Channel Enhancement-Mode MOSFET Chip Central Semiconductor

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