CPQ130 Datasheet - Central Semiconductor

CPQ130 Triac

Central www.DataSheet4U.com TM PROCESS CPQ130 Triac Semiconductor Corp. 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process Die Size Die Thickness MT1 Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 130 MILS x 130 MILS 8.6 MILS ± 0.6 MILS 99 MILS x 49 MILS 34 MILS x 34 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 624 PRINCIPAL DEVICE TYPES CQ220-12B Series CQDD-12M Series BACKSIDE MT2 145 Adams Aven.

CPQ130_CentralSemiconductor.pdf