CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET

Champion Microelectronic

Description

CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET APPLICATION Vds=25V RDS(ON)=8.5 mΩ (Max.) , VGS @10V, Ids@30A RDS(ON)=13 mΩ (Max.), VGS @4.5V, I.

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Datasheet Specifications

Part number: CMT35N03G
Manufacturer: Champion Microelectronic
File Size: 254.81 KB
Datasheet: CMT35N03G_ChampionMicroelectronic.pdf
Description: 25V N-CHANNEL ENHANCEMENT-MODE MOSFET

Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA=25℃ unle

Applications

* using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other c

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CMT35N03G 25V N-CHANNEL ENHANCEMENT-MODE MOSFET Champion Microelectronic

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