K3100G
Champion
447.25kb
3.3v crystal clock oscillators. -55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 40°C; 90%-95% R.H.; 56 days 10
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📁 Related Datasheet
K3102-01R - 2SK3102-01R
(Fuji Semiconductors)
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Free Datasheet.
K3113 - 2SK3113
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3113
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3113 is N-channel DMOS FET d.
K3114 - 2SK3114
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3114
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3114 PACKAGE Iso.
K3115 - SWITCHING N-CHANNEL POWER MOSFET
(NEC)
..
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-C.
K3115B - N-CHANNEL POWER MOSFET
(Renesas)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115B
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3115B is N-Channel MOS FET device that features .
K3116 - 2SK3116
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features.
K3126 - 2SK3126
(Toshiba Semiconductor)
2SK3126
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3126
Switching Regulator Applications
Unit: mm
z Low drain−source ON.
K3128 - 2SK3128
(Toshiba Semiconductor)
2SK3128
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3128
Chopper Regulator, DC−DC Converter and Motor Drive Applications
.
K3140 - 2SK3140
(Hitachi Semiconductor)
2SK3140
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-767C (Z) 4th. Edition February 1999 Features
• Low on-resistance R DS(on) = 6 mΩ.
K3141 - Silicon N-Channel MOS FET
(Renesas)
2SK3141
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 4 mΩ typ.
• Low drive current • 4 V gate drive de.
