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K3114 - 2SK3114

Datasheet Summary

Description

The 2SK3114 is N-channel DMOS FET device that

Features

  • a low gate charge and excellent switching characteristics, and designed for high voltage.

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Datasheet preview – K3114

Datasheet Details

Part number K3114
Manufacturer NEC
File Size 123.53 KB
Description 2SK3114
Datasheet download datasheet K3114 Datasheet
Additional preview pages of the K3114 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3114 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3114 PACKAGE Isolated TO-220 DESCRIPTION The 2SK3114 is N-channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low on-state resistance: RDS(on) = 2.2 Ω MAX. (VGS = 10 V, ID = 2.0 A) • Low gate charge: QG = 15 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 4.
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