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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3115
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
• Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.