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K3126 Datasheet - Toshiba Semiconductor

K3126 2SK3126

2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain source voltage Drain <.

K3126 Datasheet (144.16 KB)

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Datasheet Details

Part number:

K3126

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

144.16 KB

Description:

2sk3126.

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K3126 2SK3126 Toshiba Semiconductor

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