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K3126 - 2SK3126

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Datasheet Details

Part number K3126
Manufacturer Toshiba Semiconductor
File Size 144.16 KB
Description 2SK3126
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2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK3126 Switching Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.48 Ω (typ.) z High forward transfer admittance : |Yfs| = 7.5 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 450 V) z Enhancement mode : Vth = 2.4~3.
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