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K3140 - 2SK3140

Datasheet Summary

Features

  • Low on-resistance R DS(on) = 6 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline TO.
  • 220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source http://www. Datasheet4U. com 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperatu.

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Datasheet Details

Part number K3140
Manufacturer Hitachi Semiconductor
File Size 139.05 KB
Description 2SK3140
Datasheet download datasheet K3140 Datasheet
Additional preview pages of the K3140 datasheet.

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Full PDF Text Transcription

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2SK3140 Silicon N Channel MOS FET High Speed Power Switching ADE-208-767C (Z) 4th. Edition February 1999 Features • Low on-resistance R DS(on) = 6 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline TO–220CFM D G 1 2 3 S 1. Gate 2. Drain 3. Source http://www.Datasheet4U.com 2SK3140 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Note 3 Note 3 Note 1 Ratings 60 ±20 60 240 60 50 214 35 150 –55 to +150 Unit V V A A A A mJ W °C °C Pch Note 2 Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2.
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