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CET04N10

N-Channel MOSFET

CET04N10 Features

* 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D D G SOT-223 D S G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current

CET04N10 Datasheet (416.79 KB)

Preview of CET04N10 PDF

Datasheet Details

Part number:

CET04N10

Manufacturer:

Chino-Excel Technology

File Size:

416.79 KB

Description:

N-channel mosfet.

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CET04N10 N-Channel MOSFET Chino-Excel Technology

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