CET3055 Datasheet, Transistor, Chino-Excel Technology

CET3055 Features

• Transistor 60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SO

PDF File Details

Part number:

CET3055

Manufacturer:

Chino-Excel Technology

File Size:

60.44kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

TAGS

CET3055

Chino-Excel Technology

📁 Related Datasheet

CET3055L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CET3055L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell d.

CET3252 - N-Channel MOSFET (Chino-Excel Technology)
CET3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell de.

CET3301 - P-Channel MOSFET (CET)
CET3301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 53mΩ @VGS = -4.5V. Super high .

CET01N65A - N-Channel MOSFET (CET)
CET01N65A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for .

CET0215 - N-Channel MOSFET (CET)
CET0215 N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V. High dense cell .

CET04N10 - N-Channel MOSFET (Chino-Excel Technology)
CET04N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell .

CET4301 - P-Channel MOSFET (Chino-Excel Technology)
CET4301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense c.

CET4401B - P-Channel MOSFET (Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES -40V, -4.9A, RDS(ON) = 57mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. High dense cell desi.

CET4435A - P-Channel MOSFET (Chino-Excel Technology)
CET4435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -8.8A, RDS(ON) = 24mΩ @VGS = -10V. RDS(ON) = 35mΩ @VGS = -4.5V. High dense .

CET451AN - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cel.