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CET3055L

N-Channel Enhancement Mode Field Effect Transistor

CET3055L Features

* 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-S

CET3055L Datasheet (363.21 KB)

Preview of CET3055L PDF

Datasheet Details

Part number:

CET3055L

Manufacturer:

Chino-Excel Technology

File Size:

363.21 KB

Description:

N-channel enhancement mode field effect transistor.

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CET3055L N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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