Part number:
CET3055L
Manufacturer:
Chino-Excel Technology
File Size:
363.21 KB
Description:
N-channel enhancement mode field effect transistor.
* 60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-S
CET3055L Datasheet (363.21 KB)
CET3055L
Chino-Excel Technology
363.21 KB
N-channel enhancement mode field effect transistor.
📁 Related Datasheet
CET3055 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CET3252 N-Channel MOSFET (Chino-Excel Technology)
CET3301 P-Channel MOSFET (CET)
CET01N65A N-Channel MOSFET (CET)
CET0215 N-Channel MOSFET (CET)
CET04N10 N-Channel MOSFET (Chino-Excel Technology)
CET4301 P-Channel MOSFET (Chino-Excel Technology)
CET4401B P-Channel MOSFET (Chino-Excel Technology)
CET4435A P-Channel MOSFET (Chino-Excel Technology)
CET451AN N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
TAGS
Image Gallery