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CET6601 P-Channel MOSFET

CET6601 Description

CET6601 P-Channel Enhancement Mode Field Effect Transistor .

CET6601 Features

* -60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit

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Datasheet Details

Part number
CET6601
Manufacturer
CET
File Size
363.38 KB
Datasheet
CET6601-CET.pdf
Description
P-Channel MOSFET

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P-Channel MOSFET CET
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