CET6426
Chino-Excel Technology
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N-channel mosfet.
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CET6601 - P-Channel MOSFET
(CET)
CET6601
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-60V, -4.3A, RDS(ON) = 86mΩ @VGS = -10V. RDS(ON) = 125mΩ @VGS = -4.5V.
High dense.
CET6861 - P-Channel MOSFET
(Chino-Excel Technology)
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-60V, -3.5A, RDS(ON) = 130mΩ @VGS = -10V. RDS(ON) = 170mΩ @VGS = -4.5V. High dense cell de.
CET01N65A - N-Channel MOSFET
(CET)
CET01N65A
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 0.3A, RDS(ON) = 15Ω @VGS = 10V. High dense cell design for .
CET0215 - N-Channel MOSFET
(CET)
CET0215
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
150V, 2A, RDS(ON) = 440mΩ @VGS = 10V. RDS(ON) = 580mΩ @VGS = 6V.
High dense cell .
CET04N10 - N-Channel MOSFET
(Chino-Excel Technology)
CET04N10
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. High dense cell .
CET3055 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CET3055
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low R.
CET3055L - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CET3055L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V.
High dense cell d.
CET3252 - N-Channel MOSFET
(Chino-Excel Technology)
CET3252
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 8A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell de.
CET3301 - P-Channel MOSFET
(CET)
CET3301
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -7.3A, RDS(ON) = 35mΩ @VGS = -10V. RDS(ON) = 53mΩ @VGS = -4.5V.
Super high .
CET4301 - P-Channel MOSFET
(Chino-Excel Technology)
CET4301
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-40V, -6.3A, RDS(ON) = 44mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5V. High dense c.