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CET451AN

N-Channel Enhancement Mode Field Effect Transistor

CET451AN Features

* 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package. D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter

CET451AN Datasheet (60.44 KB)

Preview of CET451AN PDF

Datasheet Details

Part number:

CET451AN

Manufacturer:

Chino-Excel Technology

File Size:

60.44 KB

Description:

N-channel enhancement mode field effect transistor.

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CET451AN N-Channel Enhancement Mode Field Effect Transistor Chino-Excel Technology

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