CEU540L
Chino-Excel Technology
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N-channel mosfet.
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📁 Related Datasheet
CEU540A - N-Channel MOSFET
(CET)
CED540A/CEU540A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
100V, 25A, RDS(ON) = 49mΩ @VGS = 10V. Super high dense cell design for ext.
CEU540N - N-Channel MOSFET
(CET)
CED540N/CEU540N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 25A, RDS(ON) = 53mΩ @VGS = 10V. Super high dense cell design for ex.
CEU50N06 - N-Channel MOSFET
(CET)
CED50N06/CEU50N06
N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 36A , RDS(ON) = 18mΩ(typ) @VGS = 10V. Super high dense cell design .
CEU510J - Disc Ceramic Capacitors
(Mallory)
EIA Class 1 Temperature Compensating Disc Ceramic Capacitors
{ { { { Temperature Compensating Ideal For Use in Timing and Oscillating Circuits Conform.
CEU5175 - P-Channel MOSFET
(CET)
CED5175/CEU5175
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-55V, -40A, RDS(ON) = 23mΩ @VGS = -10V. RDS(ON) = 28mΩ @VGS = -4.5V.
Supe.
CEU51A3 - N-Channel MOSFET
(CET)
CED51A3/CEU51A3
N-Channel Enhancement Mode Field Effect Transistor FEATURES
30V, 35A, RDS(ON) = 14mΩ(typ) @VGS = 10V. RDS(ON) = 21mΩ(typ) @VGS = 4.5V..
CEU55A3 - N-Channel MOSFET
(CET)
CED55A3/CEU55A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
25V, 38A, RDS(ON) = 14mΩ @VGS = 10V. RDS(ON) = 24mΩ @VGS = 4.5V.
Super hi.
CEU55N10 - N-Channel MOSFET
(CET)
CED55N10/CEU55N10
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 55A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense ce.
CEU01N6 - N-Channel MOSFET
(CET)
CED01N6/CEU01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 0.9A, RDS(ON) = 15 Ω @VGS = 10V. Super high dense cell design for ex.
CEU01N65 - N-Channel MOSFET
(Chino-Excel Technology)
N-Channel Enhancement Mode Field Effect Transistor FEATURES
650V, 1.2A, RDS(ON) = 10.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS.
