PE58120P N-Channel Power MOSFET

ChipSourceTek

Description

PE58120P N-Channel Enhancement Mode Power MOSFET .
The PE58120P uses deep trench technology to provide excellent RDS(ON) and low gate charge.

Datasheet Specifications

Features

* VDS = 85V, ID = 120 A RDS(ON) < 5.4mΩ @ VGS=10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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