PE58120G

N-Channel Enhancement Mode Power MOSFET

ChipSourceTek

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Datasheet Details

Part number:

PE58120G

Manufacturer:

ChipSourceTek

File Size:

1.40 MB

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📄 Download PE58120G Datasheet PDF

Description:

N-channel enhancement mode power mosfet.
PE58120G N-Channel Enhancement Mode Power MOSFET Description The PE58120G uses deep trench technolo.
The PE58120G uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be.

✔ PE58120G Features

VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram
High Power and current handing capability
Lead free product is acquired

✔ PE58120G Application

General Features
VDS = 85V, ID = 90A RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V Schematic diagram

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