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PE6986E N-Channel Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET .
The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
PE6986E
Manufacturer
ChipSourceTek
File Size
1.03 MB
Datasheet
PE6986E-ChipSourceTek.pdf
Description
N-Channel Power MOSFET

Features

* VDS = 18V, ID = 6.5A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 16mΩ @ VGS=3.8V RDS(ON) < 20mΩ @ VGS=2.5V ESD Rating: 4000V HBM Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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