PE69011
Pulse Engineering
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Surface mount common mode chokes.
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PE6968 - N-Channel Enhancement Mode Power MOSFET
(semi one)
6
N-Channel Enhancement Mode Power MOSFET
Description
The PE6 68 uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.
PE6968E - N-Channel Enhancement Mode Power MOSFET
(semi one)
6
N-Channel Enhancement Mode Power MOSFET
Description
The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and o.
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Description
The PE6986E uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.
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.vishay.
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Vishay Sfernice
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LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
QUICK REFERENCE DATA
Multiple modul.
PE6003 - N-Channel Enhancement Mode Power MOSFET
(semi one)
PE6003
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge .
PE6004 - N-Channel Enhancement Mode Power MOSFET
(semi one)
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.
PE6005 - N-Channel Enhancement Mode Power MOSFET
(semi one)
N-Channel Enhancement Mode Power MOSFET
Description
The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .
PE600BA - MOSFET
(UNIKC)
PE600BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 9.8mĪ© @VGS = 10V
ID 32A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA =.
PE600SA - MOSFET
(UNIKC)
PE600SA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 12mĪ© @VGS = 10V
ID 25A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = .
PE6018 - N-Channel Enhancement Mode Power MOSFET
(semi one)
N-Channel Enhancement Mode Power MOSFET
PE6018
Description
The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with l.
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