PE600BA Datasheet - UNIKC

PE600BA MOSFET

PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM 32 20 14 11 90 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power.

PE600BA-UNIKC.pdf