PE6020K Datasheet, Mosfet, semi one

PE6020K Features

• Mosfet
• VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current
• Good stab

PDF File Details

Part number:

PE6020K

Manufacturer:

semi one

File Size:

888.35kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE6020K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide va

PE6020K Application

• Applications General Features
• VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V
• High density cell design for ultra low Rdson

TAGS

PE6020K

semi one

📁 Related Datasheet

PE60 - Power Panel 6W Potentiometer (Vishay)
.vishay. PE60 Vishay Sfernice Power Panel 6 W Potentiometer LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models QUICK REFERENCE DATA Multiple modul.

PE6003 - N-Channel Enhancement Mode Power MOSFET (semi one)
PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge .

PE6004 - N-Channel Enhancement Mode Power MOSFET (semi one)
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6004 uses advanced trench technology to provide excellent RDS(ON), low gate charge and opera.

PE6005 - N-Channel Enhancement Mode Power MOSFET (semi one)
N-Channel Enhancement Mode Power MOSFET Description The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate .

PE600BA - MOSFET (UNIKC)
PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA =.

PE600SA - MOSFET (UNIKC)
PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = .

PE6018 - N-Channel Enhancement Mode Power MOSFET (semi one)
N-Channel Enhancement Mode Power MOSFET PE6018 Description The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with l.

PE601CA - MOSFET (UNIKC)
PE601CA N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V RDS(ON) 22mΩ @VGS = 10V 28mΩ @VGS = -10V ID 20A -19A Channel N P 1.

PE6058S - N-Channel Enhancement Mode Power MOSFET (ChipSourceTek)
N-Channel Enhancement Mode Power MOSFET Description The PE6058S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It c.

PE606BA - MOSFET (UNIKC)
PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID3 22A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA =.