PE6050K N-Channel Enhancement Mode Power MOSFET

Description

N-Channel Enhancement Mode Power MOSFET .
The PE6050K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Datasheet Specifications

Features

* VDS =60V, ID=50A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V
* High Power and current handing capability
* Lead free product is acquired

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