PE600SA Datasheet - UNIKC

PE600SA MOSFET

PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 30 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 19 11 Pulsed Drain Current1 TA= 70 °C IDM 9.3 80 Avalanche Current IAS 21 Avalanche Energy L =0.1mH EAS 22 TC = 25 °C 20 Power Diss.

PE600SA-UNIKC.pdf