PE6018 Datasheet, Mosfet, semi one

PE6018 Features

• Mosfet
• VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ)
• Special process technology for high ESD capability
• High density cell design for ultra low Rdson <

PDF File Details

Part number:

PE6018

Manufacturer:

semi one

File Size:

0.97MB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

PE6018 Application

• Applications General Features
• VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ)
• Special process technology for high ES

TAGS

PE6018

semi one

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