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PE6018 N-Channel Enhancement Mode Power MOSFET

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Description

N-Channel Enhancement Mode Power MOSFET PE6018 .
The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
PE6018
Manufacturer
semi one
File Size
0.97 MB
Datasheet
PE6018-semione.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent packag

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