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PE6018 - N-Channel Enhancement Mode Power MOSFET

semi one

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Datasheet Details

Part number	PE6018
Manufacturer	semi one
File Size	0.97 MB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	PE6018-semione.pdf

PE6018 Product details

Description

The PE6018 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =18A RDS(ON) < 16mΩ @ VGS=10V (Typ:11.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

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Published: Dec 3, 2018 |