PE606BA Datasheet - UNIKC

PE606BA MOSFET

PE606BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID3 22A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Tc = 25 °C 22 Continuous Drain Current3 Tc = 100 °C TA = 25 °C ID 14 7 Pulsed Drain Current1 TA= 70 °C IDM 5.7 60 Avalanche Current IAS 12.6 Avalanche Energy L =0.1mH EAS 7.9 TC = 25 °C 17 Power D.

PE606BA Datasheet (435.75 KB)