PE60N70 N-Channel Enhancement Mode Power MOSFET

Description

N-Channel Enhancement Mode Power MOSFET PE60N70 .
The PE60N70 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: PE60N70
Manufacturer: semi one
File Size: 955.09 KB
Datasheet: PE60N70-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 60V,ID =65A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent packag

PE60N70 Distributors

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PE60N70 N-Channel Enhancement Mode Power MOSFET semi one

semi one PE60N70-like datasheet