PE6968E N-Channel Enhancement Mode Power MOSFET

Description

6 N-Channel Enhancement Mode Power MOSFET .
The PE6 68E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: PE6968E
Manufacturer: semi one
File Size: 816.67 KB
Datasheet: PE6968E-semione.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 20V,ID =6A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product is acquired

PE6968E Distributors

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PE6968E N-Channel Enhancement Mode Power MOSFET semi one

semi one PE6968E-like datasheet