PN10HN60 N-Channel Superjunction MOSFET

Chipown

Description

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General .
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

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Datasheet Specifications

Part number: PN10HN60
Manufacturer: Chipown
File Size: 374.50 KB
Datasheet: PN10HN60-Chipown.pdf
Description: N-Channel Superjunction MOSFET

Features

* RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 25nC)
* Low effective output capacitance
* 100% avalanche tested

PN10HN60 Distributors

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