PN10HN60-CBI-T1 Datasheet, Mosfet, Chipown

PN10HN60-CBI-T1 Features

• Mosfet
• RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
• Extremely high dv/dt capablity
• Very high commutation ruggedness
• Extremely low losses due to very low

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PN10HN60-CBI-T1

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Chipown

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📄 Datasheet

Description:

N-channel superjunction mosfet. The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technol

PN10HN60-CBI-T1 Application

• Applications Features
• RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
• Extremely high dv/dt capablity
• Very high commutati

TAGS

PN10HN60-CBI-T1

Chipown

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