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PN10HN60-CBI-T1, PN10HN60 N-Channel Superjunction MOSFET

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Description

PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General .
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.

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This datasheet PDF includes multiple part numbers: PN10HN60-CBI-T1, PN10HN60. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
PN10HN60-CBI-T1, PN10HN60
Manufacturer
Chipown
File Size
374.50 KB
Datasheet
PN10HN60-Chipown.pdf
Description
N-Channel Superjunction MOSFET
Note
This datasheet PDF includes multiple part numbers: PN10HN60-CBI-T1, PN10HN60.
Please refer to the document for exact specifications by model.

Features

* RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 25nC)
* Low effective output capacitance
* 100% avalanche tested

PN10HN60-CBI-T1 Distributors

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📌 All Tags

PN10HN60 N-Channel Superjunction MOSFET Chipown
Chipown PN10HN60-CBI-T1-like datasheet
PN10HN60-CAI-T1
PN10HN60