Datasheet Details
Part number:
PN10HN60-CBI-T1, PN10HN60
Manufacturer:
Chipown
File Size:
374.50 KB
Description:
N-channel superjunction mosfet.
Note:
This datasheet PDF includes multiple part numbers: PN10HN60-CBI-T1, PN10HN60.
Please refer to the document for exact specifications by model.
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.
The NeoFET MOSFET achieves an approximate 70% reduction in specific on-resistance compared to that of a conventional MOSFET.
By combining the experience of the
PN10HN60-CBI-T1 Features
* RDS(on) = 0.34Ω ( Typ.)@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 25nC)
* Low effective output capacitance
* 100% avalanche tested
PN10HN60-CBI-T1 Distributors
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