Description
PN10HN60 N-Channel Superjunction MOSFET 600V, 10A, 0.38Ω Chipown NeoFET® General .
The NeoFET, Chipown’s new generation of high voltage super-junction MOSFETs, based on an advanced deep trench filling process technologies.
Features
* RDS(on) = 0.34Ω ( Typ. )@ VGS = 10V, ID = 5A
* Extremely high dv/dt capablity
* Very high commutation ruggedness
* Extremely low losses due to very low Rdson
* Qg
* Ultra low gate charge ( Typ. Qg = 25nC)
* Low effective output capacitance
* 100% avalanche tested